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Palladium diselenide (PdSe2),a stable layered material with pentagonal structure,has attracted extensive interest due to its excellent electrical and optoelectronic performance.Here,we report a reliable process to synthesize PdSe2 via chemical vapor deposition (CVD) method.Through systematic regulation of temperature in the growth process,we can tune the thickness,size,nucleation density and morphology of PdSe2 nanosheets.Reid-effect transistors based on PdSe2 nanosheets exhibit n-type behavior and present a high electron mobility of 105 cm2·V-1·s-1.The electrical property of the devices after 6 months keeping in the air show little change,implying outstanding air-stability of PdSe2.In addition,PdSe2 near-infrared photodetector shows a photoresponsivity of 660 A·W-1 under 914 nm laser.These performances are better than those of most CVD-grown 2D materials,making ultrathin PdSe2 a highly qualified candidate material for next-generation optoelectronic applications.