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采用倒筒式直流溅射结合辐射加热方法对无源微波器件用的Y1 Ba2 Cu3O7-x(YBCO)双面薄膜生长进行了研究 ,实验结果表明 :直流非磁控溅射可以制备性能良好的薄膜 .通过基片绕支撑杆和基片表面法线旋转 ,实现了在 (10 0 )LaAlO3基片两面同时原位沉积厚度均匀的YBCO薄膜 .生长出的 2 5 .4mm(linch)高质量的YBCO双面薄膜 ,两面的Tc0 分别为 90 .3K和 90 .4K ,超导转变宽度均为 0 .8K ,两面的微观表面电阻 (Rs)随温度变化一致 ,Rs(77K ,10GHz)分别为 3 3 0 μΩ和 40 0 μΩ .在直径 3 0mm的基片上 ,薄膜的厚度均匀性良好 ,其厚度起伏在 10 %以内 .薄膜面内的Tc0 分布在 90K附近 ,Rs 都分布在 1mΩ以内 ,能满足微波器件研制的需要
The growth of Y1 Ba2 Cu3O7-x (YBCO) double-sided films for passive microwave devices was studied by inverted DC sputtering combined with radiant heating. The experimental results show that DC non-magnetron sputtering can prepare thin films with good performance By normal rotation of the substrate around the support bar and the substrate surface, a uniform thickness of YBCO film was deposited on both sides of the (10 0) LaAlO 3 substrate. The grown 2.54 mm (linch) high quality YBCO double-sided film, the Tc0 on both sides were 90. 3K and 90. 4K respectively, the transition width of the superconducting wire was 0.8K, the surface resistivity (Rs) of both surfaces changed with the temperature, Rs (77K, 10GHz) 3 0 μΩ and 40 0 μΩ on the diameter of 30mm substrate, the thickness of the film is good uniformity, the thickness fluctuations of less than 10% in the film surface Tc0 distribution in the vicinity of 90K, Rs are distributed within 1mΩ, to meet Microwave device development needs