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在n型砷化镓上测量了合金后的Ni-AuGe-Ni接触的接触电阻。接触的质量强烈地受半导体表面予蒸发清洗的影响。与化学腐蚀相比,溅射清洗显著地减小接触电阻,并改善了重复性。最佳的合金循环能得到比目前所具有的水平更低的接触电阻。
The contact resistance of the alloy after Ni-AuGe-Ni contact was measured on n-type gallium arsenide. The quality of the contact is strongly influenced by pre-evaporation cleaning of the semiconductor surface. Sputtering cleaning significantly reduces contact resistance and improves repeatability compared to chemical etching. The best alloying cycle results in lower contact resistance than currently available.