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利用Si(0 0 1)向 [110 ]方向偏 4°角的斜切表面作为衬底 ,成功地制备了分布均匀的单畴的单原子In链阵列 .扫描隧道显微镜分析表明 ,沉积的In原子优先吸附在台面上沿着台阶内边缘的位置 ,并在两个Si的二聚体链之间形成稳定的In二聚体 .In二聚体组成直的单原子链 ,其生长机理与Car提出的“表面聚合反应”相一致 .另外 ,衬底具有非常窄的台面和双原子层台阶边的特殊结构是形成单畴的单原子链的关键
Single-well In single-chain In-chain arrays with uniform distribution were prepared successfully by using a chamfered surface with a 4 ° angle from Si (0 0 1) to the [110] direction as a substrate. Scanning tunneling microscopy analysis showed that the In atoms Preferentially adsorbed on the countertop along the inner edge of the step and form a stable In dimer between the two dimer chains of Si.In dimer forms a straight monoatomic chain whose growth mechanism is in agreement with that Car proposed Of the “surface polymerization.” In addition, the substrate has a very narrow mesa and diatomic level edge of the special structure is the formation of single-monomolecular chain of the key chain