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本文针对三相可控硅整流系统建立了 EMC模型 ,提出了用 π型 RLC等效网络的级联来表示直流电缆寄生参数的 EMC模型 ,构建了实验系统 ,对系统的直流侧传导干扰进行了测量 ,并采用 Sim ulink工具对系统进行了时域传导干扰分析 ,分析结果与实验吻合 ,揭示出主要传导干扰出现在低频段 ,在 0～ 15 0 k Hz频段中 ,随频率增加 ,传导干扰减小 ,其中共模传导干扰占主要成分 ,电缆寄生参数对其影响主要是在高频段 ,它使 10 0 k Hz以上频段的传导干扰大约减小 2 0 d BμV,本文的工作为今后进一步研究更高频段的传导干扰打下基础。
In this paper, the EMC model of three-phase thyristor rectifier system is established, and the EMC model of parasitic parameters of DC cable is proposed by cascading π-type RLC equivalent networks. The experimental system is constructed and conducted on the DC side of the system The time-domain conducted interference analysis of the system was carried out by using Sim ulink tool. The analysis results were in good agreement with the experimental results, revealing that the main conducted disturbances appeared in the low frequency band. In the frequency band of 0-15 0 k Hz, with increasing frequency, conducted interference And the common mode conduction interference is the main component. The influence of cable parasitic parameters is mainly in the high frequency range, which reduces the conducted interference in the frequency band above 100 k Hz by about 20 d BμV. The work in this paper is for further research in the future High-frequency conducted interference lay the foundation.