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采用GaN HEMT工艺,解决了GaN功率HEMT材料结构、大信号模型提取、电路设计、芯片测试等难题,分析了如何提高电路效率,并利用ADS软件对电路进行了原理图与版图优化设计,成功研制出Ka波段GaN大功率、高效率功率放大器MMIC。该单片功率放大器包含三级级联放大电路,采用了Wilkinson功率分配/合成网络,采用阻性网络消除奇模振荡,输入/输出阻抗均匹配至50Ω。电路在34～36 GHz下,饱和输出功率大于6 W,功率增益大于13 dB,功率附加效率大于15%,芯片尺寸3.5 mm×1.8 mm,与目前国际报道的最好水平相当。
The GaN HEMT process is adopted to solve the problems of GaN power HEMT material structure, large signal model extraction, circuit design and chip testing. The circuit efficiency is analyzed. The schematic and layout optimization design of the circuit is completed by ADS software. A Ka-band GaN high-power, high-efficiency power amplifier MMIC. The monolithic power amplifier consists of three stages of cascaded amplifiers, using a Wilkinson power distribution / synthesis network, a resistive network to eliminate odd-mode oscillations, and matched input / output impedance to 50Ω. At 34-36 GHz, the circuit has a saturated output power of more than 6 W, a power gain of more than 13 dB, an additional power efficiency of more than 15% and a chip size of 3.5 mm × 1.8 mm, which is equivalent to the best reported in the world at present.