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概述电子工业的飞速发展,相应对半导体材料参数的精密测量提出了迫切的要求。我厂广大革命职工在伟大领袖毛主席“独立自主、自力更生”精神指引下,奋战了六个月成功地试制出硅单晶电阻率、导电类型、少数载流子寿命等物理参数测试仪,为发展我国电子工业作出了贡献。本套仪器包括有: 采用四探针法的GZ—1型硅单晶电阻测试仪;
Overview of the rapid development of the electronics industry, the corresponding semiconductor material parameters of precision measurement put forward urgent requirements. Under the guidance of Chairman Mao “great independence, self-reliance” by our great leader Mao Zedong, our vast revolutionary workers successfully fought out a six-month trial of physical parameter testers such as silicon single crystal resistivity, conductivity type and minority carrier lifetime. China’s electronics industry has made its contribution. This set of instruments include: GZ-1 silicon single crystal resistance tester using four-probe method;