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本文针对VD-MOSFET击穿电压,采用场限环终端结构的耐压设计,并进行了综合分析。在解析式中,提出了η的近似表示式。通过与计算机二维分析结果的比较,证实了η表达式的合理性,其最大相对误差约为10％。最后,对500V的VD-MOSFET进行了设计计算,说明了这一设计方法在工程中的适应性。
In this paper, VD-MOSFET breakdown voltage, the use of field-limiting terminal structure of the pressure design, and conducted a comprehensive analysis. In analytic formula, put forward the approximate expression of η. By comparing with computer two-dimensional analysis results, the rationality of η expression is confirmed, the maximum relative error is about 10%. Finally, the design and calculation of 500V VD-MOSFET shows that this design method is adaptable in engineering.