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利用快中子辐照在p型硅片中产生辐照缺陷,利用其作为热处理时硅中氧沉淀的成核中心,在硅片表面层形成洁净区和在体内形成吸杂区,能有效地抑制硅片表面氧化雾缺陷的形成.提出了较为实用的退火工艺和简单的解释.
The use of fast neutron irradiation in the p-type silicon wafer irradiation defects, the use of the heat treatment as a nucleus of oxygen deposition in the silicon surface layer formation of a clean area and the formation of gettering in the body can effectively Inhibit the formation of oxide defects on the surface of the silicon wafer, and put forward a more practical annealing process and a simple explanation.