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中子嬗变掺杂(NTD)硅单晶具有轴向和径向电阻率均匀、掺杂目标电阻率精确及无微电阻率结构等重要特点,用这种材料制得的高压整流元件具有雪崩特性好、电压分散小、等级合格率高和过载能力强等电学特性。本文用扫描电子显微镜的束感应电流(EBIC)象和吸收电流象(AEI)分别观察了NTD硅单晶和区熔硅单晶高压整流元件PN结的平整度、结深、耗尽区内的缺陷特征及其分布和少子扩散长度的变化,从而直观地显示出它们的电学特点。
The neutron transmutation doped (NTD) silicon single crystal has the important characteristics of uniform axial and radial resistivity, accurate target resistivity of doping and no micro-resistivity structure. The high-voltage rectifying element made from this material has avalanche characteristics Good, small voltage dispersion, the level of high pass rate and overload and other electrical properties. In this paper, electron beam electron beam scanning electron microscope (EBIC) and the absorption current (AEI) were observed NTD silicon single crystal and high melting silicon single crystal rectifier PN junction flatness, junction depth, depletion region Defect characteristics and their distribution and the length of minority diffusion changes, which visually shows their electrical characteristics.