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基于应变Si/SiGe器件结构,本文建立了统一的应变Si NMOSFET漏电流解析模型.该模型采用平滑函数,实现了应变Si NMOSFET漏电流及其导数,从亚阈值区到强反型区以及从线性区到饱和区的平滑性,解决了模型的连续性问题.同时考虑了载流子速度饱和效应和沟道长度调制效应的影响,进一步提高了模型精度.通过将模型的仿真结果和实验结果对比分析,验证了所建模型的有效性.该模型可为应变Si数字集成电路和模拟集成电路分析、设计提供重要参考.
Based on the structure of strained Si / SiGe devices, a uniform leakage current analytical model of strained Si NMOSFET is established in this paper. This model uses a smoothing function to achieve the leakage current and derivative of strained Si NMOSFET. From the subthreshold region to the strong inversion region, Region to saturation region to solve the problem of the continuity of the model.Considering the effect of carrier saturation and channel length modulation, the accuracy of the model is further improved.Through the comparison of the simulation results with the experimental results The validity of the proposed model is verified and verified.The model provides an important reference for the analysis and design of strained Si digital integrated circuits and analog integrated circuits.