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通过先制备一种纳米尺寸的GdF3作为GdFeAsO1-xFx样品中F的反应原料,在相对较低的温度(1120℃)下成功制备出一系列GdFeAsO1-xFx(x=0,0.05,0.1,0.15,0.2,0.25)多晶样品.X射线衍射结果表明,超导样品属四方ZrCuSiAs-type结构,晶格参数随着掺F量的增加而减小.扫描电子显微镜测试结果表明,样品具有片层状晶体形貌特征.当掺F量x=0.1时,样品表现出超导电性,超导转变温度为22K,随着掺F量的增多,超导转变温度升高.和其他制备方法相比,这种制备方法更有利于F的掺入,而且可有效减少样品中杂质相的含量.
A series of GdFeAsO1-xFx (x = 0,0.05,0.1,0.15, -0.1,0.15) were successfully prepared at relatively low temperature (1120 ℃) by preparing a nanosize GdF3 as the reaction raw material of F in GdFeAsO1-xFx samples. 0.2, 0.25) polycrystalline samples.X-ray diffraction results show that the superconducting samples are tetragonal ZrCuSiAs-type structure, the lattice parameter decreases with the increase of the amount of doped F. Scanning electron microscopy test results show that the sample has a lamellar The morphologies of the samples were characterized by SEM and TEM.The results showed that the superconducting transition temperature was 22 K when the amount of F doping was 0.1 and the superconducting transition temperature increased with the increase of F content.Compared with other methods, This preparation method is more conducive to the incorporation of F, and can effectively reduce the sample impurity phase content.