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这是一篇全面介绍用于空间环境的集成电路抗辐照加固方案的综述文章,系统地论述了各种MOS、双极和GaAs集成电路抗总剂量辐照和单击事件扰动的加固问题。原文的中文译文约五万多字,全文附图43幅,参考文献70余篇。鉴于本刊篇幅有限,本文着重编译了与器件和电路加固技术直接有关的论述,压缩至三万字左右。为了便于读者深入了解有关问题,我们仍按原文章节顺序排列,并保留了全部附图和参考文献的说明。限于编译者水平,在选材和对原文的理解方面如有不妥之处,敬请指正。最后还须指出,本文介绍的加固方案都是针对低辐照剂量率的空间环境,至于中子、γ剂量率极高的核爆炸环境下的电路加固问题,不属本文的讨论范围。
This is a review article summarizing the anti-radiation reinforcement schemes for integrated circuits used in space environment. The article discusses systematically the reinforcement of various MOS, bipolar and GaAs integrated circuits against total dose irradiation and click event disturbances. The original Chinese translation of about 50,000 words, the full text of the attached picture 43, more than 70 references. In view of the limited length of this article, this article focuses on the compilation and device and circuit reinforcement technology directly related to the discussion, compressed to about three words. In order to facilitate readers to understand the issue, we are still in accordance with the original section of the order of the articles, and retain all the drawings and references. Limited to the compiler level, in the selection of materials and the understanding of the original if any inappropriate, please correct me. Finally, it must be pointed out that the reinforcement schemes introduced in this paper are aimed at the low radiation dose rate space environment, as for the neutron, γ dose rate nuclear explosion environment of the circuit reinforcement problem, not the scope of this article.