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本文将硅(Si)衬底上外延生长的氮化镓(GaN)基发光二极管(LED)薄膜转移至含有柔性黏结层的基板上,获得了不受衬底和支撑基板束缚的LED薄膜.利用高分辨率X射线衍射仪(HRXRD)研究了薄膜转移前后的应力变化,同时对其光致发光(PL)光谱的特性进行了研究.结果表明:硅衬底GaN基LED薄膜转移至柔性基板后,GaN受到的应力会由转移前巨大的张应力变为转移后微小的压应力,InGaN/GaN量子阱受到的压应力则增大;尽管LED薄膜室温无损转移至柔性基板其InGaN阱层的In组分不会改变,然而按照HRXRD倒易空间图谱通用计算方法会得出平均铟组发生了变化;GaN基LED薄膜从外延片转移至柔性基板时其PL谱会发生明显红移.
In this paper, a thin film of gallium nitride (GaN) -based light-emitting diode (LED) grown epitaxially on a silicon (Si) substrate is transferred onto a substrate with a flexible adhesive layer to obtain an LED film that is not bound by the substrate and the supporting substrate. High-resolution X-ray diffractometer (HRXRD) was used to study the stress changes before and after film transfer, and the photoluminescence (PL) spectra of the films were also studied.The results show that: , GaN stress will be transferred from a large tensile stress before transfer to a small post-transfer compressive stress, InGaN / GaN quantum wells are subject to compressive stress is increased; Although the LED film at room temperature non-destructive transfer to the flexible substrate InGaN well layer In The composition does not change, however, the average indium group changes according to the general HRXRD reciprocal space mapping method. The PL spectrum of the GaN-based LED thin film redshifts obviously when it is transferred from the epitaxial wafer to the flexible substrate.