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针对光电子器件端面抗反镀膜的要求,研究了基于等离子体增强化学气相沉积(PECVD)技术的多层抗反膜的设计和制作.首先,对影响SiNx折射率的因素进行了实验研究,确定了具有大折射率差的SiO2/SiNx材料的PECVD沉积条件.根据理论计算分析,设计了四层SiO2/SiNx抗反膜结构,能够在70nm的波长范围内实现低于10-4的反射率,并且当单层膜厚度变化在±5nm以内时,中心波长1550nm处的反射率低于5×10-4.根据计算结果,在F-P激光器端面进行了SiO2/SiNx多层抗反镀膜的制作.对输出光功率谱的测试分析表明,在1535—1565nm范围内的残余反射率达到了10-4量级。
In order to meet the requirements of anti-counter-coating on optoelectronic devices, the design and fabrication of multilayer anti-reflective film based on PECVD technology are studied.Firstly, the factors influencing the refractive index of SiNx are studied experimentally, PECVD deposition conditions of SiO2 / SiNx material with large refractive index difference.According to the theoretical calculation and analysis, four layers of SiO2 / SiNx anti-reflective film structure are designed, and the reflectivity of less than 10-4 can be realized in the wavelength range of 70nm, and When the thickness of the single-layer film changes within ± 5nm, the reflectivity at the central wavelength of 1550nm is lower than 5 × 10-4. According to the calculation results, a multilayer antireflective coating of SiO2 / SiNx is fabricated on the end surface of the FP laser. Tests of the optical power spectrum show that the residual reflectance in the range of 1535-1565 nm reaches the order of 10-4.