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一、引言 近两年来国外报道了非晶硅薄膜的晶化问题。由于非晶半导体的热力学相是不稳定的,具有无序网络结构的非晶态硅只要经过一定的工艺处理(如退火、激光辐照或掺杂)就会在无序网络结构中呈现出微晶以至多晶结构。可以说,实用的非晶硅薄膜是由含有一定成份细小品粒(50～100)的微晶和非晶相的混合结构所构成。近两年,我们研究了用CVD法和G.D.法制备的非晶硅薄膜的晶化问题。
First, the introduction of foreign reports over the past two years the crystallization of amorphous silicon film. As the thermodynamic phase of amorphous semiconductors is unstable, amorphous silicon with a disordered network structure will appear micro-structure in the disordered network structure only after certain processing (such as annealing, laser irradiation or doping) Crystal to polycrystalline structure. It can be said that a practical amorphous silicon thin film is composed of a mixed structure of microcrystalline and amorphous phases containing a certain fraction of fine particles (50 to 100). In the past two years, we studied the crystallization of amorphous silicon thin films prepared by CVD and G.D.