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在工作压力为2 psi(1 psi=6 894.76 Pa)、抛光头转速为60 r/min、抛光盘转速为65 r/min、流量为150 mL/min的条件下,对3英寸(1英寸=2.54 cm)的Ru和Cu进行化学机械抛光实验,研究了氧化剂和FA/O螯合剂对Ru化学机械抛光速率以及对Cu和Ru的速率选择比的影响。实验结果表明:KIO4的使用可以大大提高Ru的去除速率,并且当KIO4的浓度为0.02 mol/L,FA/O螯合剂的浓度为3 mL/L时,Cu和Ru之间有很好的速率选择比。此外,通过电化学方法对Cu和Ru表面的腐蚀情况进行了分析研究。结果表明,当KIO4的浓度达到0.02 mol/L时,Cu片和Ru片表面的腐蚀基本不变,并且FA/O螯合剂的加入能略微缓解Cu和Ru之间的电偶腐蚀现象。
Measurements were carried out on a 3 inch (1 inch = 6 894.76 Pa) working pressure of 60 psi, a polishing head speed of 60 rpm, a polishing disk speed of 65 rpm, and a flow rate of 150 mL / 2.54 cm) Ru and Cu were investigated by chemical mechanical polishing. The effects of oxidant and FA / O chelating agent on Ru chemical mechanical polishing rate and Cu / Ru rate selectivity were studied. The experimental results show that the use of KIO4 can greatly improve the removal rate of Ru, and there is a good rate of Cu and Ru when the concentration of KIO4 is 0.02 mol / L and the concentration of FA / O chelator is 3 mL / L Choose ratio. In addition, the electrochemical corrosion of Cu and Ru surfaces were analyzed. The results show that when the concentration of KIO4 reaches 0.02 mol / L, the corrosion on the surface of Cu and Ru remains unchanged, and the addition of FA / O chelator can slightly alleviate the galvanic corrosion between Cu and Ru.