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采用微波等离子体化学气相沉积法，Ｎ_２／ＣＨ_４作反应气体，在 Ｓｉ（１００）基体上沉积β－Ｃ_３Ｎ_４ 化合物．使用Ｘ射线光电子能谱（ＸＰＳ）研究了基体温度对碳氮薄膜的成分和结构的影响，结果 表明：随着温度的提高，Ｎ／Ｃ原子比迅速提高，ａ一和Ｃ_３Ｎ_４在薄膜中的比例随之提高，超过一定 的温度后，Ｎ／Ｃ原子比将会降低．傅立叶变换红外光谱（ＦＴ－ＩＲ）和喇曼（Ｒａｍａｎ）谱结果支持 Ｃ－Ｎ 键的存在．
The β-C_3N_4 compound was deposited on Si (100) substrate by microwave plasma chemical vapor deposition and N_2 / CH_4 as reaction gas. The effect of substrate temperature on the composition and structure of carbon-nitrogen thin films was investigated by X-ray photoelectron spectroscopy (XPS). The results showed that the atomic ratio of N / C increased rapidly with the increase of temperature. The ratio of a-and C_3N_4 in the films With the increase, beyond a certain temperature, the N / C atomic ratio will be reduced. Fourier transform infrared spectroscopy (FT-IR) and Raman spectroscopy support the presence of C-N bonds.