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以硝酸和氢氟酸为腐蚀液对自蔓延燃烧合成的纳米均质碳化硅颗粒进行腐蚀,而后进行超声空化破碎分散及高速离心处理,获得无细胞毒性的碳化硅量子点标记材料,对其微观结构的演变过程及光学性能进行检测,对出芽短梗霉菌(Aureobasidium pulluans)活体细胞进行标记并长时程荧光成像。结果表明,自蔓延合成的SiC粉体颗粒极易腐蚀成网格状镂空结构,超声空化破碎及高速离心层析剪裁后获得尺寸高度单分散的碳化硅量子点(约为1~2.5 nm),小于体材料的激子Bohr直径(5.4 nm),会产生强烈的光致发光效应。活体细胞标记及荧光成像结果表明,腐蚀法制备出的碳化硅量子点具有较高的生物相容性,同时对其标记及长时程荧光成像原理进行了初步探讨。
Using nitric acid and hydrofluoric acid as etching solution, the nano-homogeneous silicon carbide particles synthesized by self-propagating combustion were corroded, and then ultrasonic cavitation fragmentation and high-speed centrifugation were performed to obtain a non-cytotoxic silicon carbide quantum dot marking material, The evolution of microstructure and optical properties were examined to mark long-term fluorescent imaging of living Aureobasidium pulluans cells. The results show that self-propagating synthesized SiC powder particles can easily corrode into a grid-like hollow structure, which can be obtained by ultrasonic cavitation crushing and high-speed centrifugal chromatography (about 1 ~ 2.5 nm) , Less than the bulk exciton Bohr diameter (5.4 nm), will have a strong photoluminescence effect. In vivo cell labeling and fluorescence imaging results show that the silicon carbide quantum dots prepared by the etching method have high biocompatibility, and their labeling and long-time fluorescence imaging principle are discussed.