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叙述了真空静电封接技术的工艺过程 ,对封接结果做扫描电子显微镜 (SEM)断面观察 ,并对封接件断面的元素浓度的深度分布用二次离子质谱分析器 (SIMS)进行分析 ,提出了真空静电封接的类电容器结构的新模型 .
The process of vacuum electrostatic sealing was described. The sealing results were observed by scanning electron microscopy (SEM), and the depth distribution of the elemental concentration of the seal was analyzed by SIMS. A new model of capacitor structure with vacuum electrostatic sealing is proposed.