砷化镓器件的研究业已表明,在弛豫限累工作模式中,空间电荷的不稳定性被抑制,从而获得了材料的转移电子体负电导的特性。在固体器件中限累模式的工作是极好的,它能够产生高峰值微波功率。实际上,在雷达波段,已达到数百瓦的峰值功率。并且此模式电路简单,非常近似于集总元件排列。理论和观察到的结果一致。然而在雷达发射机应用中的主要缺点是转换效率低,X波段达到的最高效率约为14％。由于这个原因,感兴趣的是建立磷化铟弛豫模式和该模式比砷化镓优越。理论分析指出,磷化铟转移电子特性的峰谷比超过3:1,而砷化镓的峰谷比为2:1。这样的 Studies of gallium arsenide devices have shown that in the relaxation-limited mode of operation, the instability of the space charge is suppressed, and the negative conductance of the transferred electron is obtained. The work of limited mode in solid state devices is excellent, it can produce high peak microwave power. In fact, at the radar band, hundreds of watts of peak power have been reached. And this mode circuit is simple, very similar to the lumped element arrangement. The theory is consistent with the observed results. However, the main disadvantage in radar transmitter applications is the low conversion efficiency, which achieves a maximum efficiency of about 14% in the X-band. For this reason, it is of interest to establish an indium phosphide relaxation mode and this mode is superior to gallium arsenide. The theoretical analysis shows that the indium phosphide has an electron-to-peak ratio of over 3: 1, while the gallium arsenide has a peak to valley ratio of 2: 1. Such