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软X射线投影光刻能够制作出特征线宽小于0．1μm的线条。激光等离子作源的研究是软X射线投影光刻中几项关键技术之一。本文报道了13nm投影光刻用激光等离子体软X射线源。对Sn（Z＝50）靶的激光打靶条件进行初步优化，测定了其在10～20nm波段范围内的辐射相对强度分布。
Soft X-ray projection lithography can produce lines with characteristic linewidths less than 0.1 μm. The research of laser plasma source is one of the key technologies in soft X-ray projection lithography. This paper reports the laser plasma soft X-ray source for 13nm projection lithography. The laser targeting conditions of Sn (Z = 50) targets were preliminarily optimized, and their relative intensity distributions in the range of 10 ~ 20 nm were measured.