Adopting a simple low-temperature (～ 500℃) vapour process, we have synthesized bulk quantity comb-like dendritic ZnO nanostructures in large area.An atomic force microscope equipped with Au-coated probes was employed to elucidate the current-voltage characteristic of the individual ZnO nanocomb.The connection electrodes were defined by depositing Pt wires using focused ion beam (FIB).A rectification effect was observed,while it was slightly suppressed compared with that of the previous reports.The good conductive properties of the sample can be attributed to the Ga+ ions implantation through the FIB process of electrode definition.We suggest that the material and the FIB method can be developed to fabricate novel nanosized devices.