从器件结构和电学特性等方面,对具有垂直结构和水平结构的Ⅲ-Ⅴ族纳米线晶体管的最新研究进展进行了综述。对于垂直器件,虽然高质量的垂直Ⅲ-Ⅴ族纳米线易于获得,但栅极的逻辑布线难以实现;对于水平结构器件,虽然栅极的逻辑布线与当前的平面硅差异不大,但无催化剂条件下难以选区定位生长水平Ⅲ-Ⅴ族纳米线。硅基Ⅲ-Ⅴ族纳米线晶体管不仅能有效提高沟道迁移率等性能,而且可以保证与硅工艺的兼容性,同时降低Ⅲ-Ⅴ族材料晶体管高昂的成本。研究表明,水平结构的硅基Ⅲ-Ⅴ族纳米线晶体管将具有更大的发展潜力。 The latest progress of the research on the III-V nanowire transistors with vertical structure and horizontal structure is reviewed from the aspects of device structure and electrical properties. For vertical devices, gate logic routing is difficult to achieve, although high-quality vertical group III-V nanowires are readily available; for horizontal-structure devices, the logic routing of the gate does not differ much from the current planar silicon, It is difficult to select and locate the growth level III-V nanowires under the conditions. The silicon-based III-V nanowire transistors can not only effectively improve the channel mobility and other properties, but also ensure the compatibility with the silicon process, and reduce the high cost of the III-V material transistors. The research shows that the horizontal structure of silicon-based III-V nanowire transistors will have greater potential for development.