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利用蒸发和溅射工艺 ,研究了 Cd Se- TFT的制作 ,特别对掺 In的 Cd Se- TFT的电性能进行了研究。实验中观察到 Cd Se掺 In后 ,TFT的 I - V特性明显得到改善 ,得到了性能稳定的 TFT器件。利用半导体掺杂理论对此现象进行了解释。
The fabrication of Cd Se-TFT was studied by using evaporation and sputtering technology. The electrical properties of Cd-doped Se-TFT were studied. It was observed experimentally that the I - V characteristics of the TFT were improved obviously after the doping of Cd and Se, and the TFT with stable performance was obtained. This phenomenon is explained using the semiconductor doping theory.