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采用定位的横断面透射电子显微术观察了P+Si065Ge035/pSi异质结内光发射红外探测器的微结构.该器件光敏区由6层p+Si065Ge035和5层UDSi层组成,每层都比较平整,各层厚度分别为6nm和32nm.在Si065Ge035/UDSi界面处存在应力场,但未观察到晶体缺陷.非晶SiO2台阶上的Si065Ge035和UDSi层是波浪状的多晶层.光敏区的边界处存在小于120nm宽的缺陷区,晶体缺陷的类型为层错和微孪晶
The microstructure of the P + Si065Ge035 / pSi heterostructure internal light-emitting infrared detector was observed by directional cross-sectional transmission electron microscopy.The photosensitive area of the device consists of 6 layers of p + Si065Ge035 and 5 layers of UDSi, each layer The thickness of each layer is 6nm and 32nm respectively.The stress field exists at the Si065Ge035 / UDSi interface, but no crystal defects are observed.The Si065Ge035 and UDSi layers on the amorphous SiO2 steps are wavy polycrystalline layers There is a defect area less than 120nm wide at the boundary, and the types of crystal defects are layer faults and micro-twins