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采用恒电流电化学技术直接在金属钼片上制备了具有白钨矿结构的钼酸盐(BaMoO4、SrMoO4)薄膜,对制备时间分别为10s直到50min的BaMoO4薄膜和制备时间分别为1min直到100min的SrMoO4薄膜的生长情况进行了SEM测试,并对相应结果进行了对比分析。研究表明:用电化学法制备BaMoO4和SrMoO4晶态薄膜,其生长特性既具有共性,也具有鲜明的个性。其共性特征已在另文中给出。其鲜明的个性特征是:1)BaMoO4和SrMoO4这两种薄膜在生长初期晶粒的成核速率不同;两种薄膜晶粒的生长速率不同;2)两种薄膜晶粒的形貌不同,晶粒的尺寸大小明显不同;3)两种薄膜晶粒的生长取向不同。该研究结果对功能薄膜的电化学制备和了解及预测白钨矿结构的晶态薄膜的生长习性,具有重要意义。
BaMoO4 and SrMoO4 thin films with scheelite structure were prepared by galvanostatic electrochemical technique directly on BaMoO4 thin films with deposition time of 10s up to 50min and SrMoO4 with deposition time of 1min up to 100min respectively The growth of the film was SEM test, and the corresponding results were analyzed. The results show that the growth characteristics of BaMoO4 and SrMoO4 crystalline films prepared by electrochemical method are both common and distinct. The common features are given in the other article. The distinctive personality characteristics are as follows: 1) The nucleation rates of BaMoO4 and SrMoO4 are different at the initial stage of growth; the growth rates of the two films are different; 2) the morphologies of the two films are different, The size of the grain is obviously different; 3) the growth orientation of the two kinds of thin film grain is different. The results of this study are of great significance for the electrochemical preparation and understanding of functional thin films and for the prediction of the growth habit of crystalline thin films of scheelite structure.