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基于GaAs器件干法刻蚀工艺,介绍感应耦合等离子(ICP)的刻蚀原理,以Cl2和BCl3为刻蚀气体,研究分析了在GaAs表面刻蚀工艺中不同的腔体压力下设备直流偏压的变化情况。发现在各种不同的功率下都存在一个特定的腔体压力,当低于该腔体压力时直流偏压会随腔体压力的增大而增加,当高于该腔体压力后直流偏压会随着腔体压力的增加而缓慢减小。讨论了产生这种现象的原因,揭示了其中的物理机理,以该方法作为参考,通过一组对比实验在工艺中得到验证,给出了GaAs刻蚀的工艺条件,为刻蚀工艺条件的优化提供了一个参考。
Based on the dry etching process of GaAs devices, the etching principle of inductively coupled plasma (ICP) is introduced. Cl2 and BCl3 are used as etching gases. The influences of different cavity pressure on the GaAs surface etching process are analyzed. Changes in the situation. It is found that there is a specific cavity pressure at different power levels. When the cavity pressure is lower than the cavity voltage, the DC bias voltage increases with the cavity pressure. When the cavity voltage is higher than DC bias Will decrease slowly as the cavity pressure increases. The reasons for this phenomenon are discussed, and the physical mechanism is revealed. Taking this method as a reference, a set of comparative experiments are validated in the process, and the process conditions for GaAs etching are given, which are optimized for the etching process conditions Provide a reference.