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为了满足整机应用要求,南京固体器件研究所正在研制一种X-波段固体电压控制振荡器(称简VCO)所需的微波砷化镓场效应振荡管.这种器件与通常放大用的GaAs MESFET存在如下一些差异:1.宽带VCO不但要求器件具有远高于所需振荡频率的微波性能,以实现在宽带覆盖范围
In order to meet the application requirements of the whole machine, Nanjing Institute of Solid-State Devices is developing a microwave gallium arsenide field-effect oscillating tube required for an X-band solid-state voltage controlled oscillator (referred to as a simple VCO) MESFET some of the following differences: 1. Broadband VCO not only requires the device has much higher than the required oscillation frequency microwave performance in order to achieve broadband coverage