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用CWCO_2激光器辐照Al-Si系统,制成了肖特基势垒。介绍了这些二极管的电特性,其反向击穿电压可与普通的P~+-n结二极管相比较,并具有较大的势垒高度、较小的开启电压和好的整流特性。
The Schottky barrier is made by irradiating the Al-Si system with a CWCO 2 laser. The electrical characteristics of these diodes are introduced. The reverse breakdown voltage of the diodes can be compared with common P ~ + -n junction diodes with a large barrier height, a small turn-on voltage and good rectification characteristics.