Polycarbosilane containing beryllium (BPCS) precursors was prepared by the reaction of polycarbosilane (PCS) with beryllium acetylacetone (Be (acac)2). The analysis of structures and components of BPCS demonstrates that their main structures are basically the same as PCS. Ceramization of BPCS precursors shows that BPCS precursors are organic below 600 °C and inorganic at 800 °C. At 1400 °C, BPCS precursors convert into silicon carbide ceramics. The ceramization of different beryllium content precursors were studied, which show that beryllium plays an important role in the inhibition of crystalline grain growth ofβ-SiC at high temperature and it can adjust the dielectric constant of silicon carbide ceramics.