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研究了用 Ｃ Ｆ４ 或乙醇作为反应气体， Ａｒ 作为气体添加剂对 Ｉ Ｔ Ｏ 膜进行反应离子刻蚀，讨论了射频放电功率，反应室气压， Ａｒ 的流量对刻蚀速率的影响，得出了最佳工艺条件，并从理论上分析了刻蚀的机理。研究表明，用乙醇等有机气体对 Ｉ Ｔ Ｏ 膜进行反应离子刻蚀的效果更为理想。
The effects of RF discharge power, reaction chamber pressure and Ar flow rate on the etching rate were studied by using C F4 or ethanol as reaction gas and Ar as gas additive for ION etching. Good process conditions, and theoretically analyzed the etching mechanism. The research shows that the effect of reactive ion etching of I T O film with organic gas such as ethanol is more ideal.