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在CMOS/SOS试验结构中进行的电荷收集测量表明,甚至在强电离轨迹情况下,节点处收集的电荷数量大致与由沉积在硅层中收集的电荷量预测值相等。电荷收集测量表明,从蓝宝石衬底中没有收集到电荷。
Charge collection measurements performed in a CMOS / SOS test structure show that the amount of charge collected at a node is approximately equal to the predicted amount of charge collected in the silicon layer, even in the case of a strong ionization trajectory. Charge collection measurements showed no charge was collected from the sapphire substrate.