本文报导了用 x 射线光电发射能谱(XPS)测量砷化镓和七种金属:银、铝、金、铬、铁、锡和钛之间的金属-半导体界面化学。锡和银每一种与 GaAs 形成突变的惰性界面。金、铝、铁、铬和钛每一种形成化学反应型非突变界面,并具有一种按这个次序增强 GaAs 离解的趋势。也报导了 GaAs 上外延生长铁的首次观察。 This paper reports on the measurement of gallium arsenide and seven metals using x-ray photoemission spectroscopy (XPS): metal-semiconductor interface chemistry between silver, aluminum, gold, chromium, iron, tin and titanium. Tin and Silver Each of the inert interfaces that form a mutation with GaAs. Each of gold, aluminum, iron, chromium and titanium forms a chemically reactive non-abrupt interface and has a tendency to enhance the dissociation of GaAs in this order. The first observation of epitaxial growth of iron on GaAs was also reported.