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用射频产生的氧等离子体实现了硅的无电极等离子体氧化。研究了氧化膜生长速率对衬底温度、氧气压、衬底离等离子区的距离以及射频功率的依赖关系。氧化膜的特性检测表明:500℃下等离子生长的 SiO_2的质量接近1100℃下干氧氧化 SiO_2的质量。
Electronless plasma oxidation of silicon is achieved with oxygen plasma generated by radio frequency. The dependence of the oxide film growth rate on the substrate temperature, oxygen pressure, the distance of the substrate from the plasma region and the RF power was studied. The examination of the characteristics of the oxide film shows that the mass of SiO 2 plasma grown at 500 ℃ is close to that of SiO 2 at 1100 ℃.