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高电子迁移率晶体管(HEMT)的小信号等效电路模型是研制低噪声放大器与分析晶体管微波特性的基础.本文通过测量HEMT器件在低温环境下(10K、77K)直流参数与散射参数(S参数),提出了一种能够直接提取低温环境下HEMT器件小信号等效电路中各元件参数的方法,并且根据器件的I~V模型分析了低温下直流参数变化的原因.在覆盖10GHz以下频段分别提取栅长为0.15μm与0.3μm两款HEMT器件的小信号等效电路低温模型,实验显示理论计算结果与实测的S参数具有很好的吻合度.
Small signal equivalent circuit model of high electron mobility transistor (HEMT) is the basis for the development of low noise amplifier and analysis of the microwave characteristics of the transistor.Through measuring the HVDC parameters of the HEMT device at low temperature (10K, 77K) and the scattering parameters ), A method that can directly extract the parameters of the small signal equivalent circuit of the HEMT device under low temperature environment is proposed, and the reasons for the change of the DC parameter under the low temperature are analyzed according to the I ~ V model of the device. The small-signal equivalent circuit low-temperature model of two HEMT devices with gate lengths of 0.15μm and 0.3μm was extracted. The experimental results show that the theoretical calculation results are in good agreement with the measured S-parameters.