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通过对VDMOS结构器件测量的I—V特性和模拟结果的分析 ,发现在此结构中 ,寄生的双极管对器件性能具有不良影响 .可以来用一种新型的具有浅扩散p+区的自对准VDMOS结构 ,以完全消除寄生的BJT导通机制 ,这对MOS技术的发展十分有益
Through the analysis of the I-V characteristics and the simulation results of VDMOS devices, it is found that the parasitic bipolar transistors have an adverse effect on the device performance in this structure. A new type of self-pair with shallow diffusion p + Quasi-VDMOS structure to completely eliminate parasitic BJT conduction mechanism, which is very beneficial for the development of MOS technology