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10.6μm的CO_2激光,对于一定电阻率范围的晶态硅,正处在载流子光吸收的强吸收区.利用输出光强高度稳定的CO_2激光器作为硅电阻率的无损检测工具,是比较理想的途径之一. 令光束正入射于上下表面为平行镜面、厚度为Z的硅晶体,若样品载流子浓度介于
10.6μm CO_2 laser is in the strong absorption region of carrier light absorption for a certain range of resistivity of crystalline silicon.It is an ideal nondestructive testing tool of silicon resistivity by using CO_2 laser with stable output intensity One of the ways to make the light beam is incident on the upper and lower surface of the parallel mirror, the thickness of the silicon crystal Z, if the sample carrier concentration between