【摘 要】
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Experimental optimization of the growth process normally involves a long trial-and-error method before the target parameters of the epilayer/crystal are established.Modeling is aimed at understanding
【机 构】
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Department of Applied Chemistry,Harbin Institute of Technology,Room 1019,92 Xidazhi Street,Harbin,Ch
【出 处】
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第一届全国宽禁带半导体学术及应用技术会议
论文部分内容阅读
Experimental optimization of the growth process normally involves a long trial-and-error method before the target parameters of the epilayer/crystal are established.Modeling is aimed at understanding of the mechanisms underlying the trends observed experimentally and,thus,should reduce time required to improve the process characteristics.In this contribution,we present the results of modeling SiC Chemical Vapor Deposition (CVD) and Physical Vapor Transport (PVT) to illustrate the application of the simulation to the process analysis and optimization.
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