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通常利用Hall系数的测量确定半导体材料的掺杂浓度。我们认为,对Si:In:而言,这样测量的结果误差大。用曲线拟合法测出的Hall浓度是利用直接测量掺杂浓度的C—V及结击穿法测得的浓度的两倍。我们认为后者的数据更可靠些。
The measurement of the Hall coefficient is usually used to determine the doping concentration of the semiconductor material. In our opinion, the error of such measurement is large for Si: In :. The Hall concentration measured by curve-fitting is twice the concentration measured by direct measurement of the doping concentration of C-V and junction breakdown. We think the latter’s data are more reliable.