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使用直流磁控溅射方法,Ar/N2作为放电气体,在玻璃衬底上沉积FexN薄膜.利用X射线光电子能谱(XPS)、掠入射小角X射线散射(GISAXS)、X射线衍射(XRD)、掠入射非对称X射线衍射(GIAXD)和原子力显微镜(AFM)研究薄膜的成分和生长机制.实验结果表明,在5%N2流量下获得FeN0.056单相化合物,薄膜中氮原子含量为14%,该值与α″-Fe16N2相中的氮原子的化学计量(11%)接近;GISAXS和AFM对薄膜表面分析表明,随溅射时间增加,薄膜变得愈加不光滑,用动力学标度的方法定量分析结果为:薄膜表面呈现自仿射性质,静态标度指数α≈0.65,生长指数β≈0.53±0.02,动力学标度指数z≈1.2,薄膜生长符合Kol-mogorov提出的能量波动概念的KPZ模型指数规律.
FexN thin films were deposited on glass substrates by DC magnetron sputtering and Ar / N2 as the discharge gas.The structures of the films were characterized by X-ray photoelectron spectroscopy (XPS), grazing incidence small angle X-ray scattering (GISAXS) and X-ray diffraction , Grazing incidence asymmetric X-ray diffraction (GIAXD) and atomic force microscopy (AFM). The experimental results show that the FeN0.056 single phase compound is obtained at a flow rate of 5% N2, the content of nitrogen atoms in the film is 14 %, Which is close to the stoichiometry (11%) of the nitrogen atom in the α "-Fe16N2 phase. The surface analysis of the thin films by GISAXS and AFM showed that as the sputtering time increased, the films became more and more matte, The results of the quantitative analysis showed that the surface of the film presented a self-affine property with a static scale index of α≈0.65, a growth index of β≈0.53 ± 0.02 and a kinetic scaling index of z≈1.2. The film growth accords with Kol-mogorov’s proposed energy fluctuation Concept KPZ Model Index Law.