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介绍了我们基于InP衬底采用无锑材料体系开展的2~3μm波段激光器及光电探测器方面的持续探索,包括采用赝配三角形量子阱方案的2~2.5μm波段I型InGaAs多量子阱激光器、采用虚拟衬底异变方案的2.5~3μm波段I型InAs多量子阱激光器、以及截止波长大于1.7μm的高In组分InGaAs光电探测器等,这些器件结构均采用GSMBE方法生长,其中2.5μm以下波长的激光器已实现了高于室温的CW激射并获实际应用,2.9μm波长的激光器也在热电制冷温度下实现了脉冲激射,含超晶格电子阻挡势垒层的截止波长2.6μm InGaAs光电探测器暗电流显著减小,此类光电探测器材料已用于航天遥感焦平面组件的研制.
The continuous exploration of 2 ~ 3μm band lasers and photodetectors based on InP - based antimony - free materials system is introduced, including the 2 ~ 2.5μm I - type InGaAs multiple quantum well laser with the pseudo - triangular quantum well scheme, 2.5 ~ 3μm I-type InAs multiple quantum well laser with the variation of virtual substrate and high In composition GaAs InGaAs photodetectors with cut-off wavelength greater than 1.7μm are adopted. These devices are grown by GSMBE method, of which 2.5μm or less Wavelength lasers have achieved CW lasers above room temperature and are in practical use. Pulsed lasers with 2.9μm wavelength are also pulsed at thermoelectric cooling temperatures with cutoff wavelengths of 2.6μm InGaAs Dark current photodetector significantly reduced, such photodetector materials have been used for the development of aerospace remote sensing focal plane components.