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在ＳＯＩ材料上采用钴（Ｃｏ）自对准硅化物技术，研究了减薄后的ＳＯＩ上钻溅射厚度的优化问题，着重分析了在硅膜厚度一定时钴膜厚度改变、钴膜厚度不变而硅膜厚度变化对硅化物形成后薄层电阻的影响。实验表明，采用ＴＣｏ：ＴＳｉ≈１：３．６的近似方法优化粘膜厚度，会得到薄层电阻最低的硅化接触，改善其接触特性。
The cobalt (Co) self-aligned silicide technology is used on the SOI material to study the optimization of the sputtered SOI thickness after thinning. The thickness of the cobalt film is changed when the thickness of the silicon film is constant. Effect of varying thickness of silicon film on sheet resistance after silicide formation. Experiments show that using TCo: TSi≈1: 3.6 approximate method to optimize the mucosal thickness, will be the lowest sheet resistance siliconized contact, to improve its contact characteristics.