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研究了一款高性能的AlGaN/GaN高电子迁移率晶体管器件(HEMT),器件基于在蓝宝石衬底上外延生长的AlGaN/GaN异质结构HEMT材料,器件栅长为86 nm,源漏间距为0.8μm。电子束光刻实现T型栅和源漏,保证了器件小的栅长和高的对准精度。制备的器件显示了良好的直流特性和射频特性,在栅偏压为0 V时漏电流密度为995 mA/mm,在栅源电压Vgs为-4.5 V时,最大峰值跨导为225 mS/mm;器件的电流增益截止频率fT和最大振荡频率fmax分别为102和147 GHz。高fT值一方面得益于小栅长,另一方面由于小源漏间距减小了源漏沟道电阻。
A high performance AlGaN / GaN high electron mobility transistor (HEMT) device based on an AlGaN / GaN heterostructure HEMT epitaxially grown on a sapphire substrate was investigated. The gate length of the device is 86 nm and the source-drain spacing is 0.8 μm. E-beam lithography to achieve T-type gate and source and drain, ensuring a small gate length and high alignment accuracy. The fabricated device shows good DC and RF characteristics with a leakage current density of 995 mA / mm at a gate bias of 0 V and a maximum peak transconductance of 225 mS / mm at a gate-source voltage of -4.5 V ; Device current gain cut-off frequency fT and maximum oscillation frequency fmax were 102 and 147 GHz. The high fT value, on the one hand, benefits from the small gate length and, on the other hand, reduces the source-drain channel resistance due to the small source-drain spacing.