在反偏、无光照、室温条件下测量了PiN硅光二极管(其光谱响应从0.4～1.2μm)中的电流噪声频谱。利用硅光二极管与高阻低噪声前置放大器的最佳组合法,在美国H-P3585A频谱分析仪上测量了20Hz～70kHz带宽内的噪声频谱。实验证实了对硅光二极管噪声机理的物理分析:在低频时,1/f噪声的贡献是主要的;在中频区,产生复合噪声(散粒噪 The current noise spectrum of the PiN silicon photodiode with its spectral response from 0.4 to 1.2 μm was measured under reverse bias, no light and room temperature. Using the best combination of silicon photodiode and high-impedance low-noise preamplifier, the noise spectrum in the 20Hz ~ 70kHz bandwidth was measured on H-P3585A spectrum analyzer in the United States. Experiments confirmed the physical analysis of the silicon photodiode noise mechanism: at low frequencies, the contribution of 1 / f noise is dominant; in the intermediate frequency region, the resulting composite noise (shot noise