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本文对N、Zn离子注入GaAs_(1-x)Px材料之后,用连续CO_2激光束进行退火作了研究.晶格恢复、注入杂质的激活率和光致发光的实验测量结果表明,CO_2激光退火的效果优于常规热退火.本文对CO_2激光退火效果优于热退火的原因作了初步的解释.
In this paper, the annealing of continuous Ga 2 O 2 and GaAs_ (1-x) Px materials by ion implantation of N and Zn was studied.The experimental results of lattice recovery, the activation rate of implanted impurities and photoluminescence indicated that the annealing of CO_2 laser The effect is better than the conventional thermal annealing.This paper preliminarily explained why the CO_2 laser annealing is better than the thermal annealing.