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分析了在北方实验室条件下,贮存25年的国产商用高频小功率晶体管的特性与可靠性,通过对10批共1 460只器件的试验、检测,并与25年前的原始数据进行对比分析,发现了贮存器件存在直流放大倍数(HFE)退化、内引线开路、外引线可焊性失效三种失效模式,并对其失效原因、失效机理进行了分析。在考虑到现代技术可以消除的因素(用充干N2封装或已焊接使用),预计80年代的国产商用高频小功率晶体管贮存失效率水平小于10-7。用贮存25年的实物揭示了国产半导体器件贮存存在的主要失效模式,为国产半导体器件提高贮存可靠性提供了真实可靠的依据。
The characteristics and reliability of domestic commercial high frequency and low power transistors stored for 25 years under the condition of the Northern laboratory were analyzed. The test and test of 1 460 devices in 10 batches were compared with the original data 25 years ago Analysis and found that there are three kinds of failure modes, such as degeneration of direct current amplification factor (HFE), open inner lead and solderability of outer lead in storage device, and analyze its failure reason and failure mechanism. Taking into account the factors that can be eliminated by modern technology (filled with dry N2 or soldered), it is estimated that the storage failure rate of domestic commercial high-frequency low-power transistors in the 1980s is less than 10-7. The 25-year-long physical condition has revealed the main failure mode of domestic semiconductor device storage and provided a true and reliable basis for improving the storage reliability of domestic semiconductor devices.