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计算了MOSFET阈电压与辐射剂量率之间的关系.计算结果与Long的估计在数量级上一致.解释了辐照过程中的剂量率效应.指出了瞬时辐射效应对N沟道管的危害.提出,采用湿氧化工艺有利于减弱N沟道管的瞬时辐射损伤.指出了这种瞬时辐射损伤会导致CMOS瞬时逻辑颠倒.提出,作为普通硅底CMOS和CMOS/SOS抗瞬时辐照加固措施,应降低多余载流子寿命,并在保持击穿电压足够高的条件下加大掺杂浓度.
The relationship between the MOSFET threshold voltage and the radiation dose rate was calculated. The calculated results were consistent with the Long estimates on the order of magnitude. The dose rate effects in the irradiation process were explained. The effects of the instantaneous radiation effects on the N-channel tube were pointed out , The wet oxidation process is helpful to reduce the instantaneous radiation damage of the N-channel tube, and it is pointed out that such instantaneous radiation damage will cause the transient logic inversion of the CMOS.It is proposed that as an anti-instantaneous radiation reinforcement measure for ordinary silicon CMOS and CMOS / SOS Reduce excess carrier lifetime and increase dopant concentration while maintaining breakdown voltage high enough.