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一、引言为了实现低温广范围的温度测量,需要有适当的测温元件。除了考虑价格低廉、互换性和复现性之外,还要求元件在低温区域具有线性的电压·温度(V-T)关系,以便于测量和控制。本文报导两种新型的半导体二极管的一些实验结果。看来,这两种二极管是适于作低温温度计的。二、实验试祥和实验程序实验中使用两种二极管,其中一种是新的高电导硅平面二极管(high-conductancesi planar diode)KB105(捷克制,用于超高频),另一种是砷化镓(GaAs)外延二极管。这两种二极管的特征是p-n结的耗尽
First, the introduction In order to achieve a wide range of low temperature temperature measurement, the need for proper temperature measurement components. In addition to consideration for low cost, interchangeability and reproducibility, the components are required to have a linear voltage-temperature (V-T) relationship in a low temperature region for measurement and control. This article reports some experimental results of two new types of semiconductor diodes. It appears that these two diodes are suitable as cryogenic thermometers. Experimental Experiment and Experimental Procedures Two kinds of diodes were used in the experiment. One of them was a new high-conductancesi planar diode KB105 (made in Czech for ultra-high frequency) and the other was arsenic Gallium (GaAs) epitaxial diode. The two diodes are characterized by depletion of the p-n junction