用 Monte Carlo法模拟了亚微米 GaAs MESFET的直流特性.不同栅压下源漏电流与源漏电压的关系表明,器件具有较高的跨导.在栅下沟道区和栅漏之间的区域均有较强的电场,使得大量的电子在漏区进入能量较高的X带能谷.电子浓度的分布表明,电子的过冲过程主要发生在栅下沟道区,因而,在这一区域,电子的平均漂移速度较高.但在漏区由于电子处于有效质量大的X带能谷中,因此,在这一区域内,电子的平均漂移速度降低. The Monte-Carlo method was used to simulate the DC characteristics of sub-micron GaAs MESFETs. The relationship between source-drain current and source-drain voltage at different gate voltages indicates that the device has a high transconductance. Have a strong electric field, so that a large number of electrons in the drain into the high energy X-band valley electron density distribution shows that the electron overshoot process occurs mainly in the gate under the channel area, therefore, in this area , The average electron drift speed is higher, but in the drain region, the electron’s average drift speed is reduced in this region because the electrons are in the effective mass X-band valley.